Ariful Haque
Texas State University, TX·Materials Science
Electric vehicles, power transmission lines, and electronics built for jet engines, nuclear reactors, and spacecraft all need devices that handle large amounts of power at high speed without failing. Gallium oxide (Ga2O3) is a promising material for these devices.
- Fields
Materials Science
Engineering
Physics
- Topics
gallium oxide
Ga2O3
diamond
- Grants
- 1 known grant, through Jun 2027
What they work on
- Grow uniform, delamination-free diamond films on gallium oxide (Ga2O3) by first forming an ultrathin quenched carbon (Q-carbon) interlayer through pulsed laser annealing.
- Test whether the Q-carbon interlayer protects Ga2O3 from damage during diamond growth and reduces thermal mismatch and heat-flow resistance at the interface.
- Characterize the structural and electrical properties of each layer and the diamond/Ga2O3 heterointerface.
- Fabricate prototype p-diamond/n-Ga2O3 p-n and p-i-n devices and measure their key performance parameters.
More about the research
It is an ultrawide bandgap semiconductor, a material that can withstand very high voltages, and it is stable at high temperatures, tolerant of radiation, and available as electronic-grade wafers. It has two major weaknesses, however. It conducts heat poorly, so high-power devices can overheat and fail. It also cannot be made p-type, the positively doped form needed to build junction devices from a single material.
Why it matters
Better heat removal and a working p-n junction could make gallium oxide power devices more reliable at high power. Such devices could serve electric vehicles, power transmission, and electronics used in high-temperature or radiation-heavy settings such as jet engines, nuclear reactors, and spacecraft. The results could guide the design of more compatible Ga2O3-based power devices.
Known grants
From NIH and NSF research grants. Labs often have other funding we can't see.
Closest labs
Anhar Bhuiyan
University of Massachusetts-Lowell, MA·Engineering
Establish a low-pressure chemical vapor deposition (LPCVD) growth platform that produces thick, lightly silicon-doped β-Ga₂O₃ layers with high electron mobility and very few unwanted background charge carriers.
Spyridon Pavlidis
North Carolina State University, NC·Engineering·Early-career
Extract impact ionization coefficients — the parameters governing avalanche breakdown — from avalanche photodiodes fabricated on native aluminum nitride substrates, to establish how large an electric field aluminum-rich AlGaN can support.
Elaheh Ahmadi
University of California-Los Angeles, CA·Engineering·Early-career
Demonstrate enhancement-mode β-Ga2O3 fin field-effect transistors with breakdown voltages beyond 3 kV, specific on-resistance under 1 milliohm-cm², and switching efficiency above 98% at 15 kHz.
The school
Texas State University: 8 labs on PI Pages, $165M a year on research, 71 research doctorates a year.
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